EUV Metal Oxide Resist Development Technology for Improved Sensitivity, Roughness and Pattern Collapse Margin for High Volume Manufacturing

Author:

Dinh Cong Que1,Nagahara Seiji2,Kuwahara Yuhei1,Dauendorffer Arnaud1,Yoshida Keisuke1,Okada Soichiro1,Onitsuka Tomoya1,Kawakami Shinichiro1,Shimura Satoru1,Muramatsu Makoto1,Yoshihara Kosuke1,Petersen John S.3,Simone Danilo De3,Foubert Philippe3,Vandenberghe Geert3,Huli Lior4,Grzeskowiak Steven4,Krawicz Alexandra4,Bae Nayoung4,Kato Kanzo4,Nafus Kathleen5,Raley Angélique5

Affiliation:

1. Tokyo Electron Kyushu Ltd.

2. Tokyo Electron Ltd.

3. imec

4. TEL Technology Center, America, LLC.

5. Tokyo Electron America, Inc.

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Reference20 articles.

1. 1. R. Brainard, C. Higgins, E. Hassanein, R. Matyi, and A. Wüest, J. Photopolym. Sci. Technol., 21 (2008) 457.

2. 2. T. I. Wallow, R. Kim, B. LaFontaine, P. P. Naulleau, C. N. Anderson, and R. L. Sandberg, Proc. SPIE, 6533 (2007) 653317.

3. 3. R. Gronheid, T. R. Younkin, M. J. Leeson, C. Fonseca, J. S. Hooge, K. Nafus, J. J. Biafore, and M. D. Smith, J. Micro/Nanolithogr. MEMS MOEMS, 10 (2011) 033004.

4. 4. T. Kozawa and S. Tagawa, Jpn. J. Appl. Phys., 49 (2010) 030001.

5. 5. C. A. Mack, Proc. SPIE, 7639 (2010) 763931.

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