EUV Metal Oxide Resist Development Technology for Improved Sensitivity, Roughness and Pattern Collapse Margin for High Volume Manufacturing
-
Published:2022-12-16
Issue:1
Volume:35
Page:87-93
-
ISSN:0914-9244
-
Container-title:Journal of Photopolymer Science and Technology
-
language:en
-
Short-container-title:J. Photopol. Sci. Technol.
Author:
Dinh Cong Que1, Nagahara Seiji2, Kuwahara Yuhei1, Dauendorffer Arnaud1, Yoshida Keisuke1, Okada Soichiro1, Onitsuka Tomoya1, Kawakami Shinichiro1, Shimura Satoru1, Muramatsu Makoto1, Yoshihara Kosuke1, Petersen John S.3, Simone Danilo De3, Foubert Philippe3, Vandenberghe Geert3, Huli Lior4, Grzeskowiak Steven4, Krawicz Alexandra4, Bae Nayoung4, Kato Kanzo4, Nafus Kathleen5, Raley Angélique5
Affiliation:
1. Tokyo Electron Kyushu Ltd. 2. Tokyo Electron Ltd. 3. imec 4. TEL Technology Center, America, LLC. 5. Tokyo Electron America, Inc.
Publisher
Technical Association of Photopolymers, Japan
Subject
Materials Chemistry,Organic Chemistry,Polymers and Plastics
Reference20 articles.
1. 1. R. Brainard, C. Higgins, E. Hassanein, R. Matyi, and A. Wüest, J. Photopolym. Sci. Technol., 21 (2008) 457. 2. 2. T. I. Wallow, R. Kim, B. LaFontaine, P. P. Naulleau, C. N. Anderson, and R. L. Sandberg, Proc. SPIE, 6533 (2007) 653317. 3. 3. R. Gronheid, T. R. Younkin, M. J. Leeson, C. Fonseca, J. S. Hooge, K. Nafus, J. J. Biafore, and M. D. Smith, J. Micro/Nanolithogr. MEMS MOEMS, 10 (2011) 033004. 4. 4. T. Kozawa and S. Tagawa, Jpn. J. Appl. Phys., 49 (2010) 030001. 5. 5. C. A. Mack, Proc. SPIE, 7639 (2010) 763931.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Advanced development for contact-holes of metal-oxide resists;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21
|
|