Advanced processes in metal-oxide resists for high-NA EUV lithography-Reference-Cited by-同舟云学术

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Advanced processes in metal-oxide resists for high-NA EUV lithography

Published:2024-04-09 Issue: Volume: Page:
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Container-title:Advances in Patterning Materials and Processes XLI
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Author:

Dinh Cong Que,Nagahara Seiji,Cho Kayoko,Tomori Hikari,Kuwahara Yuhei,Onitsuka Tomoya,Okada Soichiro,Kawakami Shinichiro,Hara Arisa,Fujimoto Seiji,Muramatsu Makoto,Tsuzuki Reiko,Liu Xiang,Thiam Arame,Feurprier Yannick,Nafus Kathleen,Carcasi Michael A.,Huli Lior,Kato Kanzo,Krawicz Alexandra,Kocsis Michael,De Schepper Peter,McQuade Lauren,Kasahara Kazuki,Garcia Santaclara Jara G.,Hoefnagels Rik,La Fontaine Bruno,Miyakawa Ryan H.,Anderson Chris N.,Naulleau Patrick P.

Publisher

SPIE

Reference11 articles.

1. Metal oxide EUV photoresist performance for N7 relevant patterns and processes;Stowers,2016

2. Advanced development for contact-holes of metal-oxide resists;Dinh,2023

3. Coater/developer-based patterning techniques to achieve tight pitches with 0.33 NA single exposure;Kato,2023

4. Advanced development methods for high NA EUV lithography;Dinh,2023

5. Establishment of new process technology for EUV lithography;Kuwahara,2023

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da);ACS Nano;2024-08-20

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