Metal Containing Resist Readiness for HVM EUV Lithography
Author:
Affiliation:
1. IMEC
Publisher
Technical Association of Photopolymers, Japan
Subject
Materials Chemistry,Organic Chemistry,Polymers and Plastics
Link
https://www.jstage.jst.go.jp/article/photopolymer/29/3/29_501/_pdf
Reference4 articles.
1. 1. B. Cardineau, M. Krysak, M.Trikeriotis, E. P. Giannelis, C. K. Ober, K. Cho, R. Brainard, "Tightly-Bound Ligands for Hafnium Nanoparticle EUV Resists", Proc. SPIE, 8322 (2012) 83220V-1.
2. 2. S. Chakrabarty, C. Ouyang, M. Krysak, M. Trikeriotis, K. Cho, E. P. Giannelis, C. K. Ober, "Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning", Proc. SPIE, 8679 (2013) 867906-8.
3. 3. B. L. Henke, E. M. Gullikson, J. C. Davis, "X-ray interactions: photo absorption, scattering, transmission, and refection at E=50-30000 eV, Z=1-92", Atomic Data and Nuclear Data Tables, 54 (1993) 181-342
4. 4. D. De Simone, I. Pollentier, G. Vandenberghe, "Metal-containing materials as turning point of EUV lithography", J. Photopolym. Sci. Technol., 28 (2015) 507.
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