Electrochemically Deposited Ruthenium Seed Layer Followed by Copper Electrochemical Plating-Reference-Cited by-同舟云学术

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Electrochemically Deposited Ruthenium Seed Layer Followed by Copper Electrochemical Plating

Published:2006 Issue:1 Volume:9 Page:C19
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kim Young-Soon,Kim Hyung-Il,Dar M. A.,Seo Hyung-Kee,Kim Gil-Sung,Ansari S. G.,Senkevich Jay J.,Shin Hyung-Shik

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference29 articles.

1. Dual Damascene Interconnect of Copper and Low Permittivity Dielectric for High Performance Integrated Circuits

2. Damascene copper electroplating for chip interconnections

3. Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces

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1. Direct recycling of Li‐ion batteries from cell to pack level: Challenges and prospects on technology, scalability, sustainability, and economics;Carbon Energy;2024-02-29

2. Seedless Cu Electroplating on Ru-W Thin Films for Metallisation of Advanced Interconnects;International Journal of Molecular Sciences;2022-02-08

3. Review—Ruthenium as Diffusion Barrier Layer in Electronic Interconnects: Current Literature with a Focus on Electrochemical Deposition Methods;Journal of The Electrochemical Society;2018-12-10

4. Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-05

5. Photocatalytic activity of metal-decorated SiO2@TiO2 hybrid photocatalysts under water splitting;Korean Journal of Chemical Engineering;2016-05-24

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