Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications-Reference-Cited by-同舟云学术

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Published:2017-05 Issue:3 Volume:35 Page:03E109
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Dey Sonal¹,Yu Kai-Hung,Consiglio Steven,Tapily Kandabara,Hakamata Takahiro,Wajda Cory S.,Leusink Gert J.,Jordan-Sweet Jean,Lavoie Christian,Muir David,Moreno Beatriz,Diebold Alain C.¹

Affiliation:

1. Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Rd., Albany, New York 12203

Funder

National Science Foundation (NSF)

Natural Sciences and Engineering Research Council of Canada (NSERC)

Western Economic Diversification Canada (WD)

Canadian Institutes of Health Research (CIHR)

National Research Council Canada (NRC)

Canada Foundation for Innovation (CFI)

University of Saskatchewan (U of S)

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://aip.scitation.org/doi/pdf/10.1116/1.4979709

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