Chemical Reaction Pathways for MOVPE Growth of Aluminum Nitride
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference16 articles.
1. GaN, AlN, and InN: A review
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. A study of parasitic reactions between NH3 and TMGa or TMAI
4. Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design
5. A theoretical approach to the single-source precursor concept: quantum chemical modeling of gas-phase reactions
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1. Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process;Applied Surface Science;2021-04
2. Quantum chemical study of the Co-adsorption of NH3 and MMAl on ideal AlN(0 0 0 1)-Al surfaces;Journal of Crystal Growth;2020-08
3. Nucleation and growth behavior of aluminum nitride film using thermal atomic layer deposition;Ceramics International;2020-06
4. The Growth of AlN Single Layer on Sapphire at Low Pressure using Metalorganic Chemical Vapor Deposition (MOCVD);Journal of Physics: Conference Series;2020-05-01
5. Quantum Chemistry Study on Gas Reaction Mechanism in AlN MOVPE Growth;The Journal of Physical Chemistry A;2020-03-23
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