A Reliable Nano Device with Appropriate Performance in High Temperatures
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits
2. Low on-Resistance SOI Dual-Trench-Gate MOSFET
3. A new nanoscale and high temperature field effect transistor: Bi level FinFET
4. Mobility Enhancement by Back-Gate Biasing in Ultrathin SOI MOSFETs With Thin BOX
5. Process variation study of Ground Plane SOI MOSFET
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