Conducting and Charge‐Trapping Defects in Buried Oxide Layers of SIMOX Structures-Reference-Cited by-同舟云学术

Conducting and Charge‐Trapping Defects in Buried Oxide Layers of SIMOX Structures

Published:1996-01-01 Issue:1 Volume:143 Page:347-352
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Afanas'ev V. V.¹²³⁴⁵,Brown G. A.¹²³⁴⁵,Hughes H. L.¹²³⁴⁵,Liu S. T.¹²³⁴⁵,Revesz A. G.¹²³⁴⁵

Affiliation:

1. Department of Applied Physics, University of Erlangen‐Nürnberg, Erlangen, Germany

2. Texas Instruments, Incorporated, Dallas, Texas 75265

3. Naval Research Laboratory, Washington, District of Columbia 20375

4. Honeywell Solid State Electronics Center, Plymouth, Minnesota 55441

5. Revesz Associates, Bethesda, Maryland 20817

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1836434/pdf

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