Formation of ultra-thin silicon-on-insulator materials by low-dose low-energy oxygen ion implantation
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference14 articles.
1. Structural inhomogeneity and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon
2. Practical reduction of dislocation density in SIMOX wafers
3. SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter
4. Y. Omura, S. Nakashima, K. Izumi, T. Ishii, Technical Digest 1991 IEEE International Electron Devices Meeting, Washington, DC, 1991, p.675
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5. Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers;Japanese Journal of Applied Physics;2004-04-27
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