Author:
McIntyre Paul,Chi David,Chui Chi On,Kim Hyoungsub,Seo Kang-Ill,Saraswat Krishna,Sreenivasan Raghavasimhan,Sugawara Takuya,Aguirre-Testado F. S.,Wallace Robert M.
Abstract
We discuss the effects of interface layers between high-k gate insulators and the Ge substrate on the electrical characteristics of Ge MOS devices. Our work has focused on both germanium oxynitride (GeOxNy) and tantalum oxynitride (TaOxNy) interface layers. We find that ultrathin interface layers of TaOxNy, a high permittivity diffusion barrier, produce greatly improved charge trapping characteristics and promising capacitance scaling for high-k/Ge gate stacks. Effects of interface layers on interface state density and the frequency dispersion of the capacitance-voltage (CV) behavior under inversion are also described.
Publisher
The Electrochemical Society
Cited by
12 articles.
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