Growth of Sub-Nanometer Thin Continuous TiN Films by Atomic Layer Deposition
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference36 articles.
1. Atomic layer deposition of WxN/TiN and WNxCy/TiN nanolaminates
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3. Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric
4. Tunable Work-Function Engineering of TiC–TiN Compound by Atomic Layer Deposition for Metal Gate Applications
5. Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3
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1. Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor;Semiconductor Science and Technology;2024-09-13
2. Impact of Different Intermediate Layers on the Morphology and Crystallinity of TiO 2 Grown on Carbon Nanotubes by Atomic Layer Deposition;Advanced Materials Interfaces;2021-07-11
3. Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer;Langmuir;2020-10-26
4. Photoelectrochemical water splitting: a road from stable metal oxides to protected thin film solar cells;Journal of Materials Chemistry A;2020
5. Atomic Layer Deposition of TiN below 600 K Using N2H4;Solid State Phenomena;2018-08
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