Characterization of Grapho-Silicidation on n+4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices-Reference-Cited by-同舟云学术

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Characterization of Grapho-Silicidation on n+4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices

Published:2016 Issue:9 Volume:5 Page:P457-P460
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

De Silva Milantha,Maeda Tomonori,Ishikawa Seiji,Sezaki Hiroshi,Miyazaki Takamichi,Kikkawa Takamaro,Kuroki Shin-Ichiro

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. Material science and device physics in SiC technology for high-voltage power devices

3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

4. Si ohmic contacts on N-type SiC studied by XPS

5. Investigation of microstructure and chemical composition of Ni contacts to n-type 4H–SiC

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 500℃ high-temperature reliability of Ni/Nb Ohmic contact on n-type 4H-SiC;Japanese Journal of Applied Physics;2021-12-15

2. CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC;Japanese Journal of Applied Physics;2020-04-29

3. Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC;Japanese Journal of Applied Physics;2019-10-15

4. High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications;Thin Solid Films;2019-01

5. Femtosecond-laser-induced modifications on a 4H-SiC surface and their application to low-temperature diffusion at the Ni/SiC interface;Japanese Journal of Applied Physics;2018-10-02

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