High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications
Author:
Funder
JSPS KAKENHI
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference67 articles.
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1. Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits;Japanese Journal of Applied Physics;2024-08-01
2. Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC;Materials Today Communications;2024-08
3. Effect of the Deposition Sequence of Ti and W on the Ni-Based Ohmic Contacts to N-Type 4h-Sic;2024
4. Formation mechanism, interface characteristics and the application of metal/SiC thin-film ohmic contact after high-temperature treatment;Journal of Materials Research and Technology;2023-05
5. Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications;IEEE Transactions on Electron Devices;2022-08
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