Author:
Omura Y.,Fukuchi Kyota,Ino Daishi,Hayashi Osanori
Abstract
This paper introduces a scaling scheme of the cross-current tetrode (XCT) SOI MOSFET and preliminary results. It is demonstrated that the XCT-SOI MOSFET is a promising solution for future 'ultra low-energy' LSIs suitable for medical applications. It is shown that the proposed scaling scheme yields useful design guidelines for XCT devices.
Publisher
The Electrochemical Society
Cited by
5 articles.
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