Proposal of preliminary device model and scaling scheme of cross-current tetrode SOI MOSFET aiming at low-energy circuit applications-Reference-Cited by-同舟云学术

Proposal of preliminary device model and scaling scheme of cross-current tetrode SOI MOSFET aiming at low-energy circuit applications

Published:2011-10 Issue:1 Volume:64 Page:18-27
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Omura Yasuhisa,Yu Azuma,Yoshioka Yoshimasa,Fukuchi Kyota,Ino Daishi

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

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5. Hisamoto D, Lee W, Kedzierski J, Anderson E, Takeuchi H, Asano K, et al. A folded-channel MOSFET for deep-sub-tenth micron era. In: Tech dig IEEE int electron dev meet, San Francisco; 1998. p. 1032–4.

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