1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
2. Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
3. J. R. Hwang, J. H. Ho, S. M. Ting, T. P. Chen, Y. S. Hsieh, C. C. Huang, Y. Y. Chiang, H. K. Lee, A. Liu, T. M. Shen, G. Braithwaite, M. T. Currie, N. Gerrish, R. Hammond, A. Lochtefeld, F. Singaporewala, M. T. Bulsara, Q. Xiang, M. R. Lin, W. T. Shiau, Y. T. Loh, J. K. Chen, S. C. Chien, S. W. Sun, and F. Wen, Paper presented at the 2003 Symposium on VLSI Technology, IEEE (2003).
4. Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy