Oxygen Precipitation in Heavily Doped Silicon

Author:

Bains S. K.12,Griffiths D. P.12,Wilkes J. G.12,Series R. W.12,Barraclough K. G.12

Affiliation:

1. Philips Components Limited, Millbrook Industrial Estate, Southampton, Hants, SO9 7BH, England

2. Royal Signals and Radar Establishment, Malvern, Worcs, WR14 3PS, England

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Properties of silicon crystals;Handbook of Silicon Based MEMS Materials and Technologies;2020

2. Impact of germanium co-doping on oxygen precipitation in heavily boron-doped Czochralski silicon;Superlattices and Microstructures;2016-11

3. Properties of Silicon Crystals;Handbook of Silicon Based MEMS Materials and Technologies;2015

4. Impact of heavy doping with donors on CZ silicon properties;Crystal Research and Technology;2014-02-18

5. Scanning infrared microscopy study of thermal processing induced defects in low resistivity Si wafers;Semiconductor Science and Technology;2013-07-05

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