Impact of heavy doping with donors on CZ silicon properties
Author:
Affiliation:
1. MEMC Electronic Materials SpA, a SunEdison Company; via Nazionale 59; 39012 Merano Italy
2. MEMC Electronic Materials SpA, a SunEdison Company; viale Gherzi 31; 28100 Novara Italy
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference16 articles.
1. K. Nakamura R. Suewaka T. Saishoji J. Tomioka Proceedings of the Forum on the Science and Technology of Silicon Materials 2003 2003 161
2. Void properties in silicon heavily doped with arsenic and phosphorus
3. Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt
4. A Technique for Delineating Defects in Silicon
5. Crystal Originated Singularities on Silicon Wafers After SC1 Cleaning
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