Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In–Ga–Zn–O Channels

Author:

Shao Lijie,Nomura Kenji,Kamiya Toshio,Hosono Hideo

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference28 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. H. D. Kim, J.-S. Park, Y. G. Mo, and S. S. Kim , Paper 3-1 presented at Digest of 9th International Meeting on Information Display , Seoul, Korea, 2009.

4. M.-C. Hung, W.-T. Lin, J. J. Chang, P.-L. Chen, C.-Y. Wu, C.-J. Lin, H.-L. Chiu, C.-Y. Huang, and Y.-C. Kao , International Workshop on Transparent Amorphous Oxide Semiconductors 2010 , Tokyo, Japan, 2010.

5. J.-H. Lee, D.-H. Kim, D.-J. Yang, S.-Y. Hong, K.-S. Yoon, P.-S. Hong, C.-O. Jeong, H.-S. Park, S. Y. Kim, S. K. Lim et al. , Paper 625 presented at Digest of Soc. Inf. Display 2008 , Los Angeles, CA, 2008.

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