Plasma Enhanced Chemical Vapor Deposition of Conformal GeTe Layer for Phase Change Memory Applications-Reference-Cited by-同舟云学术

Plasma Enhanced Chemical Vapor Deposition of Conformal GeTe Layer for Phase Change Memory Applications

Published:2012 Issue:6 Volume:1 Page:Q119-Q122
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Gourvest Emmanuel,Vallée Christophe,Michallon Philippe,Blanc Romuald,Tiron Raluca,Jourde Dominique,Lhostis Sandrine,Maitrejean Sylvain

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Electrical Behavior of Phase-Change Memory Cells Based on GeTe

2. Phase change memory technology

3. Kim I. S. Cho S. L. Im D. H. Cho E. H. Kim D. H. Oh G. H. Ahn D. H. Park S. O. Nam S. W. Moon J. T. Chung C. H. , Symposium on VLSI Technology Tech. Dig., 203 (2010).

4. Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug

5. Characterization of Ge[sub 1−x]Te[sub x] Chalcogenide Thin Films Deposited by MOCVD for Phase Change Memory Applications

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues;Semiconductor Science and Technology;2017-12-13

2. Nanopatterning of GeTe phase change films via heated-probe lithography;Nanoscale;2017

3. Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications;Journal of Physics D: Applied Physics;2015-06-03