Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug-Reference-Cited by-同舟云学术

Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug

Published:2007-08-14 Issue:18 Volume:19 Page:4387-4389
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Choi Byung Joon¹,Choi Seol¹,Shin Yong Cheol¹,Kim Kyung Min¹,Hwang Cheol Seong¹,Kim Yoon Jung¹,Son Young Jin¹,Hong Suk Kyoung¹

Affiliation:

1. Department of Materials Science and Engineering and Interuniversity Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea, and Research & Development Division, Hynix Semiconductor Inc., San 136-1, Ami-Ri, Bubal-Up, Ichon-Si, Kyoungki-Do 467-701, Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm071313x

Reference10 articles.

1. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology

2. Lee, S. Y.; Kim, K.Digest of Technical Papers; International Conference on Integrated Circuit Design and Technology, Austin, Texas, May 17−20, 2004; Institute of Electrical and Electronic Engineers: New York, 2004; p 45.

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