Nonideality Suppression and 16-State Multilevel Cell Storage Optimization in Phase Change Memory With Linear-Like Circuit-Reference-Cited by-同舟云学术

Nonideality Suppression and 16-State Multilevel Cell Storage Optimization in Phase Change Memory With Linear-Like Circuit

Published:2023-02 Issue:2 Volume:70 Page:493-498
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Cheng¹^ORCID,Xie Chenchen¹^ORCID,Chen Houpeng¹^ORCID,Xu Siqiu¹,Li Xi¹^ORCID,Sui Zhenchao²,Song Zhitang¹^ORCID

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

2. Semiconductor Manufacturing International (Beijing) Corporation, Beijing, China

Funder

National Natural Science Foundation of China

Strategic Priority Research Program of the Chinese Academy of Sciences

Science and Technology Council of Shanghai

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/10013089.pdf?arnumber=10013089

Reference22 articles.

1. Phase-change heterostructure enables ultralow noise and drift for memory operation

2. Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug

3. Helmet: A resistance drift resilient architecture for multi-level cell phase change memory system

4. Drift-resilient cell-state metric for multilevel phase-change memory

5. Read Optimization Enables Ultralow Resistance Drift for Phase Change Memory

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