Electrical Properties of Cobalt and Copper Contamination in Processed Silicon-Reference-Cited by-同舟云学术

Electrical Properties of Cobalt and Copper Contamination in Processed Silicon

Published:2001 Issue:6 Volume:148 Page:G326
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Benton J. L.,Boone T.,Jacobson D. C.,Silverman P. J.,Rosamilia J. M.,Rafferty C. S.,Weinzierl Steve,Vu Bao

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer

2. M. Borner, S. Landau, S. Metz, and B. O. Kolbesen, inCrystalline Defects and Contamination: Their Impact and Control in Device Manufacturing II, B. O. Kolbesen, C. Claeys, P. Stallhofer, and F. Tardiff, Editors, PV 97-22, p. 338, The Electrochemical Society Proceedings Series, Pennington, NJ (1997).

3. A Study of the Copper-Pair Related Centers in Silicon

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