The Influence of the Hafnium Doping on Negative Bias Stability in Zinc Oxide Thin Film Transistor-Reference-Cited by-同舟云学术

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The Influence of the Hafnium Doping on Negative Bias Stability in Zinc Oxide Thin Film Transistor

Published:2010 Issue:9 Volume:13 Page:H295
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kim Woong-Sun,Moon Yeon-Keon,Kim Kyung-Taek,Shin Sae-Young,Du Ahn Byung,Lee Je-Hun,Park Jong-Wan

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference15 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

3. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

4. Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors

5. Effects of Electrical Bias Stress on the Performance of ZnO-Based TFTs Fabricated by RF Magnetron Sputtering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of doping concentrations of Hf on structural and electrical properties of HfxZn1-xO thin films;Journal of Ovonic Research;2023-08

2. Influence of Channel Layer Thickness on the Instability of Amorphous SiZnSnO Thin Film Transistors Under Negative Bias Temperature Stress;physica status solidi (a);2018-01-24

3. The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition;Nanoscale Research Letters;2017-01-23

4. Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping;Journal of Nanoscience and Nanotechnology;2015-10-01

5. Improvement of Negative Bias Stress Stability in Mg_0.03Zn_0.97O Thin-Film Transistors;IEEE Electron Device Letters;2015-09

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