Author:
O'Sullivan E. J.,Gajek M. J.,Nowak J. J.,Brown S. L.,Gaidis M. C.,Hu G.,Sun J. Z.,Trouilloud P. L.,Abraham D. W.,Robertazzi R. P.,Gallagher W. J.,Worledge D. C.
Abstract
Spin-torque Magnetoresistive Random Access Memory (ST-MRAM) is the subject of intense investigation since it extends MRAM technology to densities beyond those achieved with the earlier field-switched MRAM technology. This paper reviews recent developments in ST-MRAM MTJ device technology, including exciting progress in scaling MTJs down to dimensions approaching 20 nm. Fabrication issues relevant to development of ST-MRAM, including its integration with CMOS back-end-of-line (BEOL) processing, are also briefly discussed.
Publisher
The Electrochemical Society
Cited by
3 articles.
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