Improved Etch Characteristics of Magnetic Tunneling Junction Materials by Using Helium-Reference-Cited by-同舟云学术

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Improved Etch Characteristics of Magnetic Tunneling Junction Materials by Using Helium

Published:2017 Issue:9 Volume:6 Page:N148-N154
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Park Sungwoo,Yang Kyungchae,Lee Hoseok,Kim Dongwoo,Baek Jongung,Shim Taehun,Park Jeagun,Yeom Geunyoung

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Memory Devices: Energy–Space–Time Tradeoffs

2. Spin-transfer torque magnetic random access memory (STT-MRAM)

3. A new spin on magnetic memories

4. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

5. Etching of CoFeB Using CO∕NH[sub 3] in an Inductively Coupled Plasma Etching System

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge-mediated voltage modulation of magnetism in Hf_0.5Zr_0.5O₂/Co multiferroic heterojunction;Chinese Physics B;2023-02-01

2. Efficient and Highly Reliable Spintronic Non-volatile Quaternary Memory Based on Carbon Nanotube FETs and Multi-TMR MTJs;ECS Journal of Solid State Science and Technology;2022-06-01

3. Dry etching strategy of spin-transfer-torque magnetic random access memory: A review;Journal of Vacuum Science & Technology B;2020-09

4. A Spintronics Memory PUF for Resilience Against Cloning Counterfeit;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2019-11

5. Size dependence of the thermal stability factor in a perpendicular CoFeB/MgO magnetic tunnel junction studied by micromagnetic simulations;Japanese Journal of Applied Physics;2019-02-22

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