Deactivation Kinetics in Heavily Arsenic‐Doped Silicon-Reference-Cited by-同舟云学术

Deactivation Kinetics in Heavily Arsenic‐Doped Silicon

Published:1999-11-01 Issue:11 Volume:146 Page:4246-4252
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Nobili D.¹,Solmi S.¹,Merli M.²,Shao J.³

Affiliation:

1. Department of Applied Chemistry and Materials Science, University of Bologna, 2-40100 Bologna, Italy

2. INFM, Department of Physics, University of Ferrara, 12-44100, Ferrara, Italy

3. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, China

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1392622/pdf

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