Experimental investigations and simulation of the deactivation of arsenic during thermal processes after activation by SPER and spike annealing-Reference-Cited by-同舟云学术

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Experimental investigations and simulation of the deactivation of arsenic during thermal processes after activation by SPER and spike annealing

Published:2008-12 Issue: Volume:154-155 Page:211-215
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Martinez-Limia A.,Pichler P.,Lerch W.,Paul S.,Kheyrandish H.,Pakfar A.,Tavernier C.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation

2. Modeling and Simulation of Advanced Annealing Processes

3. Arsenic deactivation in Si: Electronic structure and charge states of vacancy-impurity clusters

4. Sentaurus Process Version Z-2007.03, Synopsys, Inc.

5. 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors RTP 2006;Lerch,2007

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Challenges and opportunities for process modeling in the nanotechnology era;Journal of Computational Electronics;2013-06-14

2. Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers;AIP Conference Proceedings;2012

3. Future challenges in CMOS process modeling;Thin Solid Films;2010-02

4. Front-end process modeling in silicon;The European Physical Journal B;2009-11-07

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