Two‐Dimensional Modeling of Low Pressure Chemical Vapor Deposition Hot Wall Tubular Reactors: II . Systematic Analysis of Pure and Phosphorus In Situ Doped Polycrystalline Silicon Depositions-Reference-Cited by-同舟云学术

Two‐Dimensional Modeling of Low Pressure Chemical Vapor Deposition Hot Wall Tubular Reactors: II . Systematic Analysis of Pure and Phosphorus In Situ Doped Polycrystalline Silicon Depositions

Published:1992-01-01 Issue:1 Volume:139 Page:305-312
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Azzaro Catherine¹,Duverneuil Patrick¹,Couderc Jean‐Pierre¹

Affiliation:

1. Ecole Nationale Supérieure d'Ingénieurs de Génie Chimique (ENSIGC), Laboratoire de Génie Chimique, URA 192 du CNRS, 31078 Toulouse Cédex, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2069190/pdf

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