Low-Pressure Chemical Vapor Deposition of Semi-insulating Polycrystalline Silicon Thin Films: II. Theoretical Local Analysis of the Process-Reference-Cited by-同舟云学术

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Low-Pressure Chemical Vapor Deposition of Semi-insulating Polycrystalline Silicon Thin Films: II. Theoretical Local Analysis of the Process

Published:2001 Issue:3 Volume:148 Page:C156
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Barathieu P.,Caussat B.,Scheid E.,Couderc J. P.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Polysilicon growth kinetics in a low pressure chemical vapour deposition reactor

2. Modeling and Analysis of Low Pressure CVD Reactors

3. Analysis of Multicomponent LPCVD Processes: Deposition of Pure and In Situ Doped Poly‐Si

4. Modeling of LPCVD Reactors: Effect of Empty Inlet Tube

5. Chemical vapor deposition of silicon under reduced pressure in hot-wall reactors

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