High Stability InGaZnO[sub 4] Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers-Reference-Cited by-同舟云学术

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High Stability InGaZnO[sub 4] Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers

Published:2009 Issue:8 Volume:12 Page:H296
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kim Dong Hun,Choi Seung-Hoon,Cho Nam Gyu,Chang YoungEun,Kim Ho-Gi,Hong Jae-Min,Kim Il-Doo

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference21 articles.

1. Amorphous oxide channel TFTs

2. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

3. High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering

4. Low voltage operating InGaZnO4 thin film transistors using high-k MgO–Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate

5. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

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1. Bias stress stabilities of PMMA-passivated indium-gallium-zinc-oxide thin-film transistors after 100 °C steam exposure;Solid-State Electronics;2024-05

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3. Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer;IEEE Journal of the Electron Devices Society;2022

4. High-k Fluoropolymers Dielectrics for Low-Bias Ambipolar Organic Light Emitting Transistors (OLETs);Materials;2021-12-11

5. Large-area (64 × 64 array) inkjet-printed high-performance metal oxide bilayer heterojunction thin film transistors and n-metal-oxide-semiconductor (NMOS) inverters;Journal of Materials Science & Technology;2021-08

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