Atomic Layer Deposition of High Quality HfO2Using In-Situ Formed Hydrophilic Oxide as an Interfacial Layer
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO2/Si Direct-Contact Gate Stacks
2. Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process
3. Tetrakis(dimethylamido)hafnium Adsorption and Reaction on Hydrogen Terminated Si(100) Surfaces
4. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
5. Structure and stability of ultrathin zirconium oxide layers on Si(001)
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth mechanism of HfO2 film on H-terminated Si (100) surface from atomic layer deposition process using tetrakis(ethylmethylamino)hafnium;Surfaces and Interfaces;2024-10
2. A methodological review on material growth and synthesis of solar-driven water splitting photoelectrochemical cells;RSC Advances;2019
3. Chemically stable artificial SEI for Li-ion battery electrodes;Applied Physics Letters;2017-03-27
4. Interfacial and electrical properties of radio frequency sputtered ultra-thin TiO2 film for gate oxide applications;Journal of Materials Science: Materials in Electronics;2015-08-20
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3