Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process-Reference-Cited by-同舟云学术

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Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process

Published:2008-09 Issue:5 Volume:26 Page:1235-1240
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Hackley Justin C.,Demaree J. Derek,Gougousi Theodosia

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2965813

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1. A theoretical study of the atomic layer deposition of HfO2 on Si(1 0 0) surfaces using tetrakis(ethylmethylamino) hafnium and water;Applied Surface Science;2023-03

2. Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al₂O₃ Films;The Journal of Physical Chemistry C;2022-04-18

3. Effect of ALD Processes on Physical and Electrical Properties of HfO₂ Dielectrics for the Surface Passivation of a CMOS Image Sensor Application;IEEE Access;2022

4. Surface Defect Engineering of MoS2 for Atomic Layer Deposition of TiO2 Films;ACS Applied Materials & Interfaces;2020-09-24

5. Area-Selective Deposition: Fundamentals, Applications, and Future Outlook;Chemistry of Materials;2020-05-14

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