Author:
Wirths Stephan,Ikonic Zoran,von den Driesch Nils,Mussler Gregor,Breuer Uwe,Tiedemann Andreas,Bernardy Patric,Holländer Bernd,Stoica Toma,Hartmann Jean-Michel,Grützmacher Detlev,Mantl Siegfried,Buca Dan
Abstract
Recent breakthrough in the epitaxial growth of CMOS compatible GeSn and SiGeSn alloys has enabled the development of direct to indirect gap semiconductors combinations for group IV quantum well laser structures. To advance in this emerging application field, we have investigated the epitaxial growth of highly strained Ge which is expected to exhibit an indirect to direct bandgap transition. In addition, the overgrowth of device grade SiGeSn ternaries is proven by exhaustive structural and optical analysis. Moreover, doping of SiGeSn alloys, required for carrier injection layers of electrical pumped lasers, is presented and the realization of strained Ge/SiGeSn double quantum well laser heterostructures on relaxed GeSn buffers is highlighted.
Publisher
The Electrochemical Society
Cited by
7 articles.
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