Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films-Reference-Cited by-同舟云学术

Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films

Published:2009 Issue:12 Volume:156 Page:G213
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kim Kyung Min,Choi Byung Joon,Song Seul Ji,Kim Gun Hwan,Hwang Cheol Seong

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Identification of a determining parameter for resistive switching of TiO2 thin films

2. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

3. Reproducible resistance switching in polycrystalline NiO films

4. Electrical observations of filamentary conductions for the resistive memory switching in NiO films

5. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

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