Towards Contact Resistance Minimization through CoSi2Formation Process Optimization on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing-Reference-Cited by-同舟云学术

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Towards Contact Resistance Minimization through CoSi2Formation Process Optimization on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

Published:2015 Issue:7 Volume:4 Page:P220-P225
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Lee Jin Yul,Kim Hun Joo,Kim Eun Jeong,Song Han Sang,Yeom Seung Jin,Ishigaki Toshikazu,Kang Kitaek,Yoo Woo Sik

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. The Disilicides of Tungsten, Molybdenum, Tantalum, Titanium, Cobalt, and Nickel, and Platinum Monosilicide: A Survey of Their Thermodynamic Properties

2. Silicides and local interconnections for high-performance VLSI applications

3. Cobalt silicide thermal stability: from blanket thin film to submicrometer lines

4. Lavoie C. Cabral C. Jr. , d'Heurle F. M. Jordan-Sweet J. Harper J. M. E. , NSLS Activity Report, 2 (2001).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High temperature electromigration behavior of cobalt lines observed by in situ transmission electron microscopy;Applied Physics Letters;2023-08-21

2. Development of microstructural and magnetic properties of Co50Si50 alloy powders during mechanical alloying approach;Applied Physics A;2021-11-29

3. Thermal Silicidation of Ni/SiGe and Characterization of Resulting Nickel Germanosilicides;ECS Journal of Solid State Science and Technology;2020-11-16

4. Effect of Substrate Type on CoSi2 Formation in Rapid Thermal Annealing;ECS Transactions;2016-05-04

5. (Invited) Pattern and Emissivity Insensitive Dopant Activation and Silicide Contact Formation Annealing in a Hot Wall Rapid Thermal Annealing System;ECS Transactions;2016-05-04

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