Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/abb191/pdf
Reference39 articles.
1. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
2. Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substrates
3. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
4. AlGaN/GaN HEMTs-an overview of device operation and applications
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁−ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design;IEEE Access;2024
2. Investigations on Al2O3-Dielectric Wide-Gap Al0.3Ga0.7N Channel MOS-HFETs with Composite Al2O3/In Situ SiN Passivation;ECS Journal of Solid State Science and Technology;2022-08-01
3. Research on photosensitive gate ferroelectric integrated GaN HEMT photodetector;AIP Advances;2021-03-01
4. Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs;IEEE Journal of the Electron Devices Society;2021
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