Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁−ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design-Reference-Cited by-同舟云学术

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Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁−ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

Published:2024 Issue: Volume:12 Page:50177-50183
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Ke Jian-Hong¹^ORCID,Lee Ching-Sung²^ORCID,Liu Han-Yin³^ORCID,Tsai Jung-Hui⁴^ORCID,Hsu Wei-Chou¹

Affiliation:

1. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan, Taiwan

2. Department of Electronic Engineering, Feng Chia University, Taichung, Taiwan

3. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung, Taiwan

Funder

Ministry of Science and Technology, R.O.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6287639/10380310/10488413.pdf?arnumber=10488413

Reference33 articles.

1. Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

2. A State-of-the-Art Review on Soft-Switching Techniques for DC–DC, DC–AC, AC–DC, and AC–AC Power Converters

3. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

4. GaN FinFETs and trigate devices for power and RF applications: review and perspective

5. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review

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