Chemical Mechanical Polishing of TiN Film with Potassium Permanganate and L-Aspartic Acid in Alkaline Slurry-Reference-Cited by-同舟云学术

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Chemical Mechanical Polishing of TiN Film with Potassium Permanganate and L-Aspartic Acid in Alkaline Slurry

Published:2021-07-01 Issue:7 Volume:10 Page:074009
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Li Chenghsing^ORCID,Cai Daolin,Feng Daohuan^ORCID,Cui Zijing^ORCID,Liu Weili,Song Zhitang

Funder

Science and Technology Council of Shanghai

National Natural Science Foundation of China

Shanghai Sailing Program

The National Key Research and Development Program of China

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/2162-8777/ac164d/pdf

Reference22 articles.

1. Review of emerging new solid-state non-volatile memories;Fujisaki;The Japanese Journal of Applied Physics,2013

2. Phase-change memory development status;Schrott,2007

3. Materials science and engineering of phase change random access memory;Sarwat;Mater. Sci. Technol.,2017

4. The PCM way for embedded Non Volatile Memories applications;Zuliani,2019

5. The Effect of Ti-Rich TiN Film on Thermal Stability of Ge2Sb2Te5for Phase Change Memory;Gao;ECS J. Solid State Sci. Technol.,2016

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Roles of Phthalic Acid and Oleic Acid on Chemical Mechanical Polishing in Alkaline Slurries for Cobalt Interconnects;ECS Journal of Solid State Science and Technology;2023-07-01

2. Glycine as an Efficient Corrosion Inhibitor for TiN Oxidation Environments;ECS Journal of Solid State Science and Technology;2023-02-01

3. Effect of Acidic Hydrogen Peroxide and Lysine Slurry on Ovonic Threshold Switch Film in Chemical Mechanical Polishing;ECS Journal of Solid State Science and Technology;2022-08-01

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