Effect of Acidic Hydrogen Peroxide and Lysine Slurry on Ovonic Threshold Switch Film in Chemical Mechanical Polishing

Abstract

For improving the three-dimensional structure of phase-change memory devices, Ovonic threshold switch devices have received renewed attention as selectors owing to a simple production process, good scalability, and excellent performance. It can replace transistors and diodes in the available technology. In this article, we studied the GeSe-based chemical mechanical polishing process. The different concentrations of hydrogen peroxide and lysine interacting with GeSe in chemical mechanical polishing were investigated. Material characterization was performed by scanning electron microscopy and atomic force microscopy. In addition, the reaction mechanism in the chemical mechanical polishing process was analyzed by electrochemical experiments and X-ray photoelectron spectroscopy.