Comparison of Precursors for Self-Assembled Monolayers as Cu Barriers

Author:

Cheng Yi-LungORCID,Lee Chih-Yen,Chen Giin-ShanORCID,Fang Jau-ShiungORCID

Abstract

Self-assembled monolayers (SAMs) are the emerging materials as the candidate of barriers for application in back-end-of–line interconnects in advanced integrated circuits. In this study, SAMs derived from organic molecules with different structures are compared in terms of electrical characteristics, Cu diffusion inhibition, and Cu–SiO2 adhesion promotion. Experimental results indicated that all SAMs formed in this study enhanced the breakdown filed of SiO2 film, promote Cu–SiO2 adhesion, and prevent Cu-silicate formation under thermal annealing. Among the studied SAMs, APTMS–SAM derived from 3-aminopropyltrimethoxysilane (APTMS) has the most pronounced enhancement. Moreover, APTMS–SAM blocks the drift of Cu under electrical stress. The terminal group −NH2 attached to Cu layer in the APTMS is the key for the improvement.

Funder

National Science Council of the Republic of China, Taiwan

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

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