A Novel Ga2O3 Superjunction LDMOS Using P-Type Diamond with Improved Performance

Abstract

Gallium oxide (Ga2O3) has drawn remarkable attention for next generation power electronics applications. However, the development of Ga2O3 power devices is seriously restricted due to its inefficient p-type dopants and low thermal conductivity. In this article, a novel Ga2O3 superjunction (SJ) LDMOS (laterally-diffused metal-oxide semiconductor) device with introduction of a p-type diamond layer in the drift region is proposed and numerical investigated. The drift region of the proposed Ga2O3 device consists of n-type Ga2O3, Al2O3 and p-type diamond, which is not only increases the breakdown voltage (BV) and reduces the specific on-resistance (R on,sp), but also improves thermal performance of the device. The simulation results show that the BV and R on,sp of the proposed device are 23.22 mΩ·cm2 and 7000 V, which are improved by more than 82.3% and 133% compared with those the conventional gate-connected filed-plate Ga2O3 lDMOS with a R on,sp of 131.43 mΩ·cm2 and a BV of 3000 V, respectively. Moreover, the thermal performance of the proposed Ga2O3 SJ LDMOS is also improved dramatically, although the power density of the proposed device is about 5.7 times higher than that of the conventional device.