Polystyrene/CeO2 Core/Shell Abrasives for High-Quality 4H-SiC Surface in ECMP: The Effects of Shell Thickness
Author:
Funder
National Natural Science Foundation of China
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ab8b71/pdf
Reference57 articles.
1. Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances
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4. Planarization of SiC and GaN Wafers Using Polishing Technique Utilizing Catalyst Surface Reaction
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