Abstract
The metastable cubic γ-(Ga1−x
Mn
x
)2O3 thin films are successfully obtained at high growth temperature by laser molecular beam epitaxy technology. The optoelectronic properties of the solar blind Schottky-type photodetectors (PDs) based on γ-(Ga1−x
Mn
x
)2O3 thin films are reported for the first time. In this experimental system, the γ-(Ga0.96Mn0.04)2O3 PD exhibits the highest light-to-dark ratio (LDR) of 6.89 × 103, which is two orders of magnitude higher than the pure β-Ga2O3 PD prepared under the same condition. In addition, it shows a fast photoresponse decay speed of about 0.081 s. The results suggest that Mn element is expected to be one of the promising dopants to induce and stabilize the metastable γ-Ga2O3, as well as optimize the optoelectronic performance of photodetectors.
Funder
Beijing Municipal Commission of Science and Technology
National Natural Science Foundation of China
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
6 articles.
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