Solar‐Blind Deep‐Ultraviolet Photoconductive Detector Based on Amorphous Ga2O3 Thin Films for Corona Discharge Detection

Abstract

A low‐cost, high‐efficiency corona discharge detection method is important in ensuring the safety of high‐voltage transmission systems. High‐sensitivity solar‐blind deep‐ultraviolet (SBDU) photodetectors (PD) have obvious advantages in corona discharge detection. Herein, a fully transparent SBDU photoconductive detector with indium tin oxide (ITO) transparent electrodes is successfully constructed based on amorphous Ga2O3 (a‐Ga2O3) thin films. The device demonstrates an ultra‐high responsivity of 1.3 × 104 A W−1, a detectivity of 3.2 × 1014 Jones, and an external quantum efficiency of 6.7 × 106%. In addition, the capability of the ultra‐sensitive fully transparent photoconductive detector is investigated in terms of corona discharge detection. It is established that the device detection distance limit for simulated corona discharge detection is up to 70 cm, that is, the device can effectively detect extremely weak solar‐blind deep‐ultraviolet signals below 204 pW cm−2. A proof‐of‐concept for the future application of easily‐integrated fully transparent amorphous Ga2O3 photoconductive detectors with low manufacturing costs in high‐voltage corona discharge detection is provided.