In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference22 articles.
1. 4H-SiC Homoepitaxial Growth on Substrate with Vicinal Off-Angle Lower than 1°
2. Pat. WO 2013191201 A1.
3. Influence of diffusion on the cleaning of the CVD reactor atmosphere
4. Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces
5. Bunkakai CVD Hanno , “CVD no Jitsumuteki kadai: Kiban to Riakuta no Seijoka Gijutsu,” Oct. 26 (2011). [in Japanese]
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lowest Concentration of Chlorine Trifluoride Gas for Cleaning Silicon Carbide Chemical Vapor Deposition Reactor;ECS Journal of Solid State Science and Technology;2022-08-01
2. Anticorrosive Behavior of Aluminum Nitride Surface Exposed to Chlorine Trifluoride Gas at High Temperatures;ECS Journal of Solid State Science and Technology;2021-03-01
3. Design of a Silicon Carbide Chemical Vapor Deposition Reactor Cleaning Process Using Chlorine Trifluoride Gas Accounting for Exothermic Reaction Heat;ECS Journal of Solid State Science and Technology;2020-10-29
4. SiC Epitaxial Reactor Cleaning by ClF3 Gas with the Help of Reaction Heat;Materials Science Forum;2020-07
5. High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film;Materials Science Forum;2019-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3