Stabilizing Dielectric Constants of Fluorine‐Doped SiO2 Films by N 2 O ‐Plasma Annealing-Reference-Cited by-同舟云学术

Stabilizing Dielectric Constants of Fluorine‐Doped SiO2 Films by N 2 O ‐Plasma Annealing

Published:1996-01-01 Issue:1 Volume:143 Page:381-385
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Takeishi S.¹,Kudoh H.¹,Shinohara R.¹,Tsukune A.¹,Satoh Y.²,Miyazawa H.²,Harada H.²,Yamada M.¹

Affiliation:

1. Fujitsu Limited, Thin Film Technology Department, Process Development Division, 1015 Kamikodanaka, Nakahara‐ku, Kawasaki 211, Japan

2. Fujitsu Limited, Process Integration Department, Process Development Division, 1015 Kamikodanaka, Nakahara‐ku, Kawasaki 211, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1836441/pdf

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