Energy-Dependent Degradation Characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2 MeV Proton Irradiation
Author:
Funder
National Research Foundation of Korea (NRF)
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference22 articles.
1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
2. GaN-on-Si Power Technology: Devices and Applications
3. GaN for space application: almost ready for flight
4. Review—Ionizing Radiation Damage Effects on GaN Devices
5. 6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching
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1. Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs;Micromachines;2024-08-29
2. Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation;Journal of Physics D: Applied Physics;2024-04-26
3. Simulation study of displacement damage induced by protons in Al<sub>x</sub>Ga<sub>1</sub><em><sub>−</sub></em><sub>x</sub>N materials;Acta Physica Sinica;2024
4. Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs;Electronics;2023-03-20
5. Effect of Double Insulators on the Performance Improvement of 3 MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs;ECS Journal of Solid State Science and Technology;2023-03-01
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