Author:
Ernst Thomas,Tachi Kiichi,Hubert Alexandre,Saracco Emeline,Dupré Cécilia,Bécu Stéphane,Vulliet Nathalie,Bernard Emilie,Cherns Peter,Maffini-Alvaro Virginie,Damlencourt Jean-François,Vizioz Christian,Colonna Jean-Philippe,Bonafos Caroline,Hartmann Jean-Michel
Abstract
Novel 3D stacked Gate-All-Around (GAA) nanowires CMOS architectures were developed recently for their very low leakage potentialities and high current drivability for sub-22nm nodes. In this paper, we will discuss some challenges and innovations associated to such devices integration as well as their potential applications.
Publisher
The Electrochemical Society
Cited by
3 articles.
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