High Quality Fluorinated Silicon Dioxide Films Prepared by Temperature-Difference-Based Liquid-Phase Deposition with Ammonium Hydroxide Incorporation-Reference-Cited by-同舟云学术

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High Quality Fluorinated Silicon Dioxide Films Prepared by Temperature-Difference-Based Liquid-Phase Deposition with Ammonium Hydroxide Incorporation

Published:2003 Issue:3 Volume:150 Page:F29
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lee Ming-Kwei,Shieh Wu-Hung,Shih Chung-Min,Lin Shuo-Yen,Tung Kuan-Wen

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/

2. Radiation Response of MOS Capacitors Containing Fluorinated Oxides

3. Reduction of interface‐state density by F2treatment in a metal‐oxide‐semiconductor diode prepared from a photochemical vapor deposited SiO2film

4. CVD of fluorosilicate glass for ULSI applications

5. Reduction Mechanism in the Dielectric Constant of Fluorine‐Doped Silicon Dioxide Film

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